Improve the performance of solar cells is one of the most effective way to reduce the overall production cost of silicon PV. Passivating contacts technology, utilising an ultra-thin SiOx layer and doped polysilicon layer, show great potential to be used for high efficiency devices. Mass production of solar cells with the n+ polysilicon passivating contacts is already underway, and it is expected that the technology will gain significant market share in the near future. This work investigates the stability of phosphorus doped n+ polysilicon passivating contacts on n-type silicon substrate, and identifies the dependences of degradation behaviours on the light soaking and dark annealing conditions. The project will involve efficiency measurement on fully fabricated solar cells and lifetime measurement on lifetime testing structures. Mathematical modelling will be used to extract the kinetic of the degradation behaviours. The student will learn about fundamental operation principle of solar cells, and various characterisation techniques commonly used in PV industries.
Fundamental knowledge of semiconductor physics is preferred.
Starting date is flexible.
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