Stability study of gallium-doped Czochralski silicon solar cells

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Description

Boron-doped Czochralski (Cz) silicon has been the most commonly used material for solar cell production over the past decades. The use of gallium as doping elements in Cz silicon has recently attracted great interest in the PV industry, with almost half of the world market share expected to be doping with Ga in 2030. The main motivation for the conversion to gallium doping is the inherent immunity provided to boron-oxygen light induced degradation (LID), due to the absence of boron.  However, apart from boron-oxygen related LID, a new degradation mechanism, commonly referred to as Light and elevated Temperature Induced Degradation (LeTID), has been reported on various types of Si materials, including gallium-doped Cz-Si. This project will investigate the stability of gallium-doped Cz-Si wafers and solar cells upon various test conditions.

The project will involve efficiency measurement on fully fabricated solar cells and lifetime measurement on lifetime testing structures. Mathematical modelling will be used to extract the kinetic of the degradation behaviours. The student will learn about fundamental operation principle of solar cells, and various characterisation techniques commonly used in PV industries.

Fundamental knowledge of semiconductor physics is preferred. 

If you're interested in this project or would like to know more details about the project, please email me at kelvin.sio@anu.edu.au

 

 

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