Optoelectronic properties of novel 2-dimensional transition metal dichalcogenides

Description

Monolayer two-dimensional (2D) Transition Metal Dichalcogenides (TMDs) have attracted numerous research attention in the recent past, courtesy of their novel properties fitting for the next generation optoelectronic devices. These properties include atomic thick flexibility and lightweight, quantum-confinement effects, high absorption efficiency, and naturally occurring passivation on their surfaces making it possible to build various vertical heterostructures and devices. Optical characterization of semiconductor materials is one of the established and important technique for understanding their properties. However, unlike the macro-meter scale materials (devices), for monolayer TMDs these techniques cannot be directly applied in a straight-forward approach. In the past our group quantified the maximum possible open circuit voltage values which solar cells fabricated from some common monolayer TMDs (WS2, MoS2, WSe2, and MoSe2) can achieve (Ref 1) by using state-of-the art micro-photoluminescence tool and techniques. In this project, we intend to employ the same optical methods to explore different optical parameters of various other TMDs (beyond the common ones) which will ultimately be important for drawing their optoelectronic properties for next studies and applications. This is a 12-credit project and suits Honours/Masters students.

Background Literature

M. Tebyetekerwa, H. T. Nguyen et al., Quantifying Quasi-Fermi Level Splitting and Mapping its Heterogeneity in Atomically Thin Transition Metal Dichalcogenides. Adv. Mater. 2019, 31 (25), 1900522

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